The effect of junction fringing fields on radiation-induced leakage current in oxide isolation structures

Author

Pershenkov, V.S. ; Chuikin, V.V.

Author_Institution

Dept. of Microelectron., Moscow Phys. Eng. Inst., USSR

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2044

Lastpage

2051

Abstract

A novel leakage current model at the bottom of the recessed field oxide associated with the effects of PN junction fringing electric fields during irradiation is presented. Analytical expressions are derived for leakage current as a function of DC bias conditions during irradiation of the substrate and of the buried layer doping levels. Values of the P⁺ channel stop and buried layer doping levels for leakage minimization are discussed. Experimental data for the leakage current as a function of irradiation bias and high-temperature annealing are described. Experimental data include the effects of structure nonuniformities on the leakage formation

Keywords

X-ray effects; insulated gate field effect transistors; integrated circuit technology; leakage currents; radiation hardening (electronics); semiconductor device models; DC bias conditions; MOSFET; P⁺ channel stop; X-ray irradiation; buried layer doping levels; effect of junction fringing fields; high-temperature annealing; irradiation bias; leakage current model; leakage minimization; oxide isolation structures; radiation hardening; radiation-induced leakage current; recessed field oxide; structure nonuniformities; Annealing; Degradation; Doping; Large scale integration; Leakage current; Microelectronics; Minimization; Physics; Semiconductor process modeling; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211402

Filename

211402