• DocumentCode
    889125
  • Title

    InGaAs/lnP heterojunction bipolar transistor grown by all-solid source molecular beam epitaxy

  • Author

    Willen, B. ; Asonen, H. ; Toivonen, M.

  • Author_Institution
    Dept. of Electron., R. Inst. of Technol., Kista, Sweden
  • Volume
    31
  • Issue
    17
  • fYear
    1995
  • fDate
    8/17/1995 12:00:00 AM
  • Firstpage
    1514
  • Lastpage
    1515
  • Abstract
    State-of-the-art InGaAs/InP heterojunction bipolar transistors were grown by all-solid source molecular beam epitaxy. Fabricated transistors showed cutoff frequencies of >100 GHz with an emitter area of 1.5×5 μm2. Together with recent studies. These results demonstrate that the valved cracker technique is a very competitive nontoxic growth method
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; molecular beam epitaxial growth; 100 GHz; HBT fabrication; InGaAs-InP; all-solid source MBE; heterojunction bipolar transistor; molecular beam epitaxy; nontoxic growth method; valved cracker technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951015
  • Filename
    464092
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=889125