DocumentCode :
889156
Title :
Evidence for a deep electron trap and charge compensation in separation by implanted oxygen oxides
Author :
Conley, J.F. ; Lenahan, P.M. ; Roitman, P.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Volume :
39
Issue :
6
fYear :
1992
fDate :
12/1/1992 12:00:00 AM
Firstpage :
2114
Lastpage :
2120
Abstract :
The authors present direct evidence for the creation of deep electron traps in SIMOX (separation by implantation of oxygen) buried oxides. In addition, they present combined electrical and electron spin resonance evidence which demonstrates that at least some positively charged paramagnetic E´ centers are compensated by negatively charged centers. Finally, they present evidence which strongly suggests that a substantial fraction of the deep electron traps are coupled to E´ centers
Keywords :
SIMOX; charge compensation; deep levels; electron traps; gamma-ray effects; paramagnetic resonance of defects; radiation hardening (electronics); 100 Mrad; 200 Mrad; SIMOX; Si-SiO2; charge compensation; deep electron trap; electron spin resonance; gamma irradiation; negatively charged centers; positively charged paramagnetic E´ centers; Charge carriers; Charge measurement; Current measurement; Electron traps; Hot carriers; NIST; Oxygen; Paramagnetic resonance; Silicon on insulator technology; Space charge;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.211410
Filename :
211410
Link To Document :
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