DocumentCode
889158
Title
A distributed MOS attenuator
Author
Bilotti, A.
Volume
55
Issue
4
fYear
1967
fDate
4/1/1967 12:00:00 AM
Firstpage
562
Lastpage
563
Abstract
A wideband electrically controllable resistive attenuator using a distributed MOS transistor is described. Bandwidth and attenuation for lumped and distributed structures are compared and a quality factor is defined. Some exmples of application for controlling the gain of amplifiers are also given.
Keywords
Attenuation; Attenuators; Bandwidth; Broadband amplifiers; MOSFETs; Parasitic capacitance; Q factor; Resistors; Thermal variables control; Voltage control;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.5587
Filename
1447517
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