DocumentCode :
889158
Title :
A distributed MOS attenuator
Author :
Bilotti, A.
Volume :
55
Issue :
4
fYear :
1967
fDate :
4/1/1967 12:00:00 AM
Firstpage :
562
Lastpage :
563
Abstract :
A wideband electrically controllable resistive attenuator using a distributed MOS transistor is described. Bandwidth and attenuation for lumped and distributed structures are compared and a quality factor is defined. Some exmples of application for controlling the gain of amplifiers are also given.
Keywords :
Attenuation; Attenuators; Bandwidth; Broadband amplifiers; MOSFETs; Parasitic capacitance; Q factor; Resistors; Thermal variables control; Voltage control;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1967.5587
Filename :
1447517
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=889158
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