Field dependent charge trapping effects in SIMOX and buried oxides at very high dose

Author

Flament, O. ; Hervé, D. ; Musseau, O. ; Bonnel, Ph ; Raffaelli, M. ; Leray, J.L. ; Margail, J. ; Giffard, B. ; Auberton-Herve, A.J.

Author_Institution

Centre d´´Etudes de Bruyeres, CEA, Bruyeres-Le-Chatel, France

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2132

Lastpage

2138

Abstract

SIMOX (separation by implantation of oxygen) devices have been irradiated at up to 100 Mrad under different positive and negative back-gate voltages. At low cumulated dose, hole trapping is controlled by external applied field. For higher doses up to 100 Mrad, the early positive net charge is compensated mainly by electron trapping. Nevertheless, at weak fields, no evidence of positive charge compensation is observed. Interface state buildup appears at very high dose (>10 Mrad) for the set of biases used, but influences slightly V_tb shift. The trapped hole recombination effect also occurs, but seems significant only for negative biases in the numerical approach. Furthermore, annealing data reveal a complex structure of traps that requires further investigations

Keywords

SIMOX; X-ray effects; electron traps; hole traps; insulated gate field effect transistors; interface electron states; metal-insulator-semiconductor devices; 100 Mrad; MOS capacitors; MOSI; SIMOX; Si-SiO₂; X-ray irradiated; annealing; buried oxides; electron trapping; field dependent charge trapping; hole trapping; interface state buildup; trapped hole recombination effect; very high dose; Annealing; Charge carrier processes; Electron traps; Europe; High-speed electronics; MOSFETs; Spontaneous emission; Thickness control; Threshold voltage; Voltage control;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211413

Filename

211413