Title :
Observation of radiation induced changes in stress and electrical properties in MOS devices
Author :
Shaw, D.C. ; Lowry, L. ; MacWilliams, K.P. ; Barnes, C.E.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
Strain measurements using X-ray diffraction were performed on irradiated commercial and radiation-hardened metal gate CMOS devices in addition to polysilicon gate NMOS devices. I-V curves were taken and Vot and Vit were separated using the subthreshold slope method for all devices. A correlation has been shown to exist between physical strain relaxation and the electrical properties as a function of radiation dose and recovery. Data shown suggest that the physical response (strain relaxation) in the silicon at the oxide interface is a measure of the type of damage induced and the recovery mechanism. Postradiation measurements of ▵Vit and ▵Vot taken immediately after irradiation support the conclusions of V. Zekeriya and T.-P. Ma (1983) and K. Kasama et al. (1986,1987); compressive stress at the silicon/SiO2 interface does reduce radiation damage in the device
Keywords :
X-ray diffraction examination of materials; gamma-ray effects; insulated gate field effect transistors; internal stresses; metal-insulator-semiconductor devices; radiation hardening (electronics); semiconductor device testing; stress relaxation; I-V curves; MOS devices; Si-SiO2 interface; X-ray diffraction; compressive stress; electrical properties; gamma irradiation; physical strain relaxation; polysilicon gate NMOS devices; radiation damage; radiation induced changes; radiation-hardened metal gate CMOS devices; recovery mechanism; subthreshold slope method; Capacitive sensors; Laboratories; MOS devices; Materials testing; Propulsion; Radiation hardening; Strain measurement; Stress; X-ray diffraction; X-ray scattering;
Journal_Title :
Nuclear Science, IEEE Transactions on
