Title :
X-ray lithography effects on MOS oxides
Author :
Lelis, A.J. ; Oldham, T.R.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
N- and p-channel MOSFETs were subjected to hot-carrier injection to compare the reliability of devices with and without exposure to simulated X-ray lithography. No significant electrical effects due to hot-carrier injection under realistic operating conditions were observed. This result suggests that neutral electron trap charging may not be as serious a problem as has been previously thought
Keywords :
X-ray effects; X-ray lithography; electron traps; hole traps; hot carriers; insulated gate field effect transistors; interface electron states; reliability; semiconductor device testing; CMOS devices; X-ray lithography effects; electrical effects; hole trapping; hot-carrier injection; interface trap generation; n-channel MOSFET; neutral electron trap charging; p-channel MOSFETs; reliability; Annealing; Electron optics; Electron traps; Hot carrier injection; Ionizing radiation; Laboratories; MOS devices; MOSFETs; Microelectronics; X-ray lithography;
Journal_Title :
Nuclear Science, IEEE Transactions on
