DocumentCode
889311
Title
A Model for the Lateral Variation of Autodoping in Epitaxial Films
Author
Srinivasan, Gurumakonda R.
Volume
15
Issue
4
fYear
1980
Firstpage
558
Lastpage
561
Abstract
A model is presented that accounts for the variation of autodoping in epitaxial films grown by the chemical vapor deposition technique over substrates containing buried layers. This model is based on the dopant distribution that exists in the epitaxial reactor during growth. It is shown that the lateral variation of autodoping can be described by the following equation...
Keywords
CVD coatings; Impurity distribution; Large scale integration; Semiconductor epitaxial layers; Chemical vapor deposition; Data systems; Epitaxial growth; Equations; Fluid flow; Inductors; Semiconductor process modeling; Solid state circuits; Substrates; Very large scale integration;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1980.1051438
Filename
1051438
Link To Document