Title :
A Model for the Lateral Variation of Autodoping in Epitaxial Films
Author :
Srinivasan, Gurumakonda R.
Abstract :
A model is presented that accounts for the variation of autodoping in epitaxial films grown by the chemical vapor deposition technique over substrates containing buried layers. This model is based on the dopant distribution that exists in the epitaxial reactor during growth. It is shown that the lateral variation of autodoping can be described by the following equation...
Keywords :
CVD coatings; Impurity distribution; Large scale integration; Semiconductor epitaxial layers; Chemical vapor deposition; Data systems; Epitaxial growth; Equations; Fluid flow; Inductors; Semiconductor process modeling; Solid state circuits; Substrates; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1980.1051438
