Title :
Logic and memory elements using two-valley semiconductors
Author :
Copeland, J.A. ; Hayashi, Teruaki ; Uenohara, M.
fDate :
4/1/1967 12:00:00 AM
Abstract :
Experimental results are given for bulk n-GaAs diodes when used as a two-state memory element and as a logic gate. An additional contact near the cathode improves the triggering sensitivity and isolates the input from the output. Bulk devices will ultimately operate at higher speeds than junction devices.
Keywords :
Additive noise; Feedback; Logic devices; Nonlinear filters; Phase estimation; Phase locked loops; Phase noise; Semiconductor device noise; Semiconductor diodes; Threshold voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.5607
