• DocumentCode
    889350
  • Title

    High-power, high-efficiency silicon avalanche diodes at ultra high frequencies

  • Author

    Prager, H.J. ; Chang, K.K.N. ; Weisbrod, S.

  • Volume
    55
  • Issue
    4
  • fYear
    1967
  • fDate
    4/1/1967 12:00:00 AM
  • Firstpage
    586
  • Lastpage
    587
  • Abstract
    Silicon avalanche diodes with a pnn+mesa structure were made according to suitably chosen design parameters, and carefully fabricated to meet stringent pedormance specifications. Operating under pulse conditions with a duty factor of approximately 10-3, efficiencies as high as 25 percent, and power outputs up to 435 watts at 425 megahertz, were achieved.
  • Keywords
    Circuits; Coaxial components; Diodes; Etching; L-band; Low pass filters; Radio frequency; Silicon; Space vector pulse width modulation; Testing;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5609
  • Filename
    1447539
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=889350