DocumentCode
889353
Title
Computer Analysis of a Short-Channel BC MOSFET
Author
Oka, Hideki ; Nishiuchi, Koichi ; Nakamura, Tetsuo ; Ishikawa, Hajime
Volume
15
Issue
4
fYear
1980
Firstpage
579
Lastpage
585
Abstract
This paper describes the results of a two-dmensional numerical analysis of a normally-off-type buried-channel MOSFET (BC MOSFET). This device has two operation modes whose boundary is a flat-band voltage. Bulk current is a main current when V/sub SG/ < V/sub FB/. Short-channel effects, like the decrease of a threshold voltage, were examined. Devices with a thinner gate oxide, a shallower channel depth, and a higher substrate concentration are effective for the short-channel effect.
Keywords
Computer aided analysis; Electronic engineering computing; Insulated gate field effect transistors; Numerical analysis; Semiconductor device models; Circuit analysis computing; Electrodes; Electron devices; Impurities; MOSFET circuits; Physics computing; Solid modeling; Solid state circuits; Threshold voltage; Very large scale integration;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1980.1051441
Filename
1051441
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