Title :
Computer Analysis of a Short-Channel BC MOSFET
Author :
Oka, Hideki ; Nishiuchi, Koichi ; Nakamura, Tetsuo ; Ishikawa, Hajime
Abstract :
This paper describes the results of a two-dmensional numerical analysis of a normally-off-type buried-channel MOSFET (BC MOSFET). This device has two operation modes whose boundary is a flat-band voltage. Bulk current is a main current when V/sub SG/ < V/sub FB/. Short-channel effects, like the decrease of a threshold voltage, were examined. Devices with a thinner gate oxide, a shallower channel depth, and a higher substrate concentration are effective for the short-channel effect.
Keywords :
Computer aided analysis; Electronic engineering computing; Insulated gate field effect transistors; Numerical analysis; Semiconductor device models; Circuit analysis computing; Electrodes; Electron devices; Impurities; MOSFET circuits; Physics computing; Solid modeling; Solid state circuits; Threshold voltage; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1980.1051441
