Charge transport and trapping in HgCdTe MIS devices

Author

Moriwaki, M.M. ; Srour, J.R. ; Strong, R.L.

Author_Institution

Northrop Electron. Syst. Div., Hawthorne, CA, USA

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2265

Lastpage

2272

Abstract

A pulsed UV (ultraviolet) excitation technique was used to study the bias- and photon-energy dependences of charge transport and trapping processes in HgCdTe MIS devices containing a ZnS/anodic-sulfide dual-dielectric gate insulator. Electron and hole transport in the insulator occurs rapidly (<1 ms) at 84 K. The dependences of UV-induced flatband voltage shift on bias and on the number of incident photons (equivalent to total dose) are similar to results of Co-60 irradiations. The centroids of the electron and hole trap distributions were determined to be near the ZnS/anodic-sulfide interface and near the center of the dual-dielectric insulator, respectively

Keywords

II-VI semiconductors; cadmium compounds; electron traps; hole traps; mercury compounds; metal-insulator-semiconductor devices; radiation effects; HgCdTe; LWIR device; MIS capacitors; MIS devices; UV-induced flatband voltage shift; ZnS; ZnS/anodic-sulfide dual-dielectric gate insulator; bias dependence; charge transport; electron transport; electron trap distribution; hole transport; hole trap distributions; photon-energy dependences; pulsed UV excitation technique; trapping processes; Charge carrier processes; Electron traps; Infrared detectors; Insulation; Ionizing radiation; MIS devices; Mercury (metals); Pulse amplifiers; Pulse measurements; Zinc compounds;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211432

Filename

211432