Title :
An Mo Gate 4K Static MOS RAM
Author :
Ishikawa, Hajime ; Yamamoto, Minoru ; Tokunaga, Hiroshi ; Toyokura, Nobuo ; Yanagawa, Fumihiko ; Kiuchi, Kazuhide ; Kondo, Mamoru
Abstract :
Performance of a 4K static MOS RAM was improved significantly with utilization of low-resistance molybdenum-gate process instead of conventional polysilicon-gate process. A typical access time of 27 ns was achieved with a low power consumption of 250 mW when the RAM was operated at supply voltage of 5 V and TTL-compatible I/O levels. Signal propagation delay along the word line of the RAM was quite small as a result of the reduction in interconnection resistance. Several disadvantages of the Mo gate process were overcome by improving fabrication technologies.
Keywords :
Field effect integrated circuits; Integrated memory circuits; Random-access storage; Annealing; Electrodes; Fabrication; Integrated circuit interconnections; Propagation delay; Random access memory; Read-write memory; Silicon; Temperature; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1980.1051450
