Title :
A 5-V Only 16-kbit Stacked-Capacitor MOS RAM
Author :
Koyanagi, Mitsumasa ; Sakai, Yoshio ; Ishihara, Masamichi ; Tazunoki, Masanori ; Hashimoto, Norikazu
Abstract :
A novel one-transistor-type MOS RAM is discussed. This memory cell gives a remarkable area reduction and/or increase in storage capacitance by stacking the main portion of the storage capacitor on the address transistor, bit lines, or field oxides. It is callled a stacked-capacitor (STC) RAM. This STC memory has a three-level poly-Si structure. The stacked capacitor has poly-Si-Si/sub 3/N/sub 4/-poly-Si (or Al) structure. A 16-kbit STC RAM has been fabricated with 3-/spl mu/m technology and operated successfully. Memory performance is strikingly improved by using STC cells.
Keywords :
Aluminium; Elemental semiconductors; Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Random-access storage; Silicon; Silicon compounds; Capacitance; Circuits; Geometry; Lithography; MOS capacitors; Random access memory; Read only memory; Read-write memory; Stacking; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1980.1051452
