• DocumentCode
    889586
  • Title

    MOS transistors with anodically formed metal oxides as gate insulators

  • Author

    Witt, William ; Huber, F. ; Delivorias, P.

  • Volume
    55
  • Issue
    5
  • fYear
    1967
  • fDate
    5/1/1967 12:00:00 AM
  • Firstpage
    687
  • Lastpage
    688
  • Abstract
    A new type of MOS field effect transistor has been fabricated utilizing anodically formed valve metal oxide films (AMOS). These anodic oxide films such as hafnium dioxide (HfMOS) offer the advantage of producing high dielectric constant insulators in the channel in order to improve the transconductance (gm) and voltage gain (µA= Cin/Cfb) of the device.
  • Keywords
    Dielectrics and electrical insulation; FETs; Hafnium; High-K gate dielectrics; MOSFETs; Metal-insulator structures; Oxidation; Silicon; Temperature; Valves;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5633
  • Filename
    1447563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=889586