Title :
Broadband emission from InGaAs-GaAs-AlGaAs LED with integrated absorber by selective-area MOCVD
Author :
Osowski, M.L. ; Lammert, R.M. ; Forbes, D.V. ; Ackley, D.E. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
fDate :
8/17/1995 12:00:00 AM
Abstract :
Three-step selective-area metal organic chemical vapour deposition is used to fabricate a strained layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED with an integrated absorber. A tapered oxide width mask pattern is used for the active region regrowth to produce an edge emitting device with a continuous variation in the quantum well thickness and composition along its length. A maximum spectral width of 165 nm is obtained
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light emitting diodes; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InGaAs-GaAs-AlGaAs; SQW device; active region regrowth; broad spectrum LED; broadband emission; edge emitting device; integrated absorber; metal organic chemical vapour deposition; selective-area MOCVD; single quantum well; strained layer; tapered oxide width mask pattern;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950982
