DocumentCode
889603
Title
Broadband emission from InGaAs-GaAs-AlGaAs LED with integrated absorber by selective-area MOCVD
Author
Osowski, M.L. ; Lammert, R.M. ; Forbes, D.V. ; Ackley, D.E. ; Coleman, J.J.
Author_Institution
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Volume
31
Issue
17
fYear
1995
fDate
8/17/1995 12:00:00 AM
Firstpage
1498
Lastpage
1499
Abstract
Three-step selective-area metal organic chemical vapour deposition is used to fabricate a strained layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED with an integrated absorber. A tapered oxide width mask pattern is used for the active region regrowth to produce an edge emitting device with a continuous variation in the quantum well thickness and composition along its length. A maximum spectral width of 165 nm is obtained
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light emitting diodes; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InGaAs-GaAs-AlGaAs; SQW device; active region regrowth; broad spectrum LED; broadband emission; edge emitting device; integrated absorber; metal organic chemical vapour deposition; selective-area MOCVD; single quantum well; strained layer; tapered oxide width mask pattern;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950982
Filename
464101
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