Title :
An 18K bipolar dynamic random access memory
Author :
Penoyer, Ralph F. ; El-kareh, Badih ; Houghton, Russell J. ; Lane, Paul K. ; Selfridge, Ted A.
Abstract :
A 2K/spl times/9 bipolar dynamic random access memory (RAM) experimental chip is described with a 75 ns and 300 ns access and cycle time, respectively. The design is based on a two device cell of 800 /spl mu/m/SUP 2/ size. All chip input and output signals are TTL compatible.
Keywords :
Bipolar integrated circuits; Integrated memory circuits; Random-access storage; bipolar integrated circuits; integrated memory circuits; random-access storage; Art; Biographies; CMOS process; DRAM chips; Electron devices; MOS devices; Microprocessors; Read-write memory; Semiconductor memory; Solid state circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1980.1051483
