Contributions of sidewall illumination and current spreading to the light emission of InGaN-GaN light-emitting diode arrays

Author

Yu, Yi-Chen ; Hsieh, Chih-Hao ; Shih, Ghien-An ; Chiu, Tzu-Yang ; Yeh, Dong-Ming ; Lu, Chih-Feng ; Huang, JianJang ; Yang, C.C.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

18

Issue

8

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

983

Lastpage

985

Abstract

We investigate the contribution of sidewall illumination in InGaN-GaN quantum-well-based light-emitting diode (LED) arrays with various cell radii. The intensity contribution from the array sidewall decreases with the increase of radius as the perimeter/area ratio is reduced. We then compare the effects of current spreading in the LED arrays of different sizes and conclude that the effect of current spreading needs to be given full consideration when the cell size in a microarray becomes larger. This letter provides a novel approach to calculate the intensity contributions of sidewall illumination and current spreading to GaN-based LED arrays.

Keywords

gallium compounds; indium compounds; light emitting diodes; optical arrays; quantum well devices; InGaN-GaN; InGaN-GaN quantum-well-based light-emitting diode arrays; LED arrays; current spreading; sidewall illumination; Etching; Gallium nitride; Light emitting diodes; Lighting; Optical arrays; Quantum wells; Rough surfaces; Semiconductor diodes; Surface roughness; Surface texture; Light-emitting diodes (LEDs); microarray; sidewall illumination;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.873461

Filename

1613991