• DocumentCode
    889863
  • Title

    All TTL Compatible Clock CCD Memory with CCD Generator

  • Author

    Gamou, Yoshimi ; Yamada, Michihiro ; Fujishima, Kazuyasu ; Tada, Tetsuo ; Takano, Satoshi

  • Volume
    15
  • Issue
    5
  • fYear
    1980
  • Firstpage
    881
  • Lastpage
    886
  • Abstract
    The method of on-chip CCD clock generation is discussed and successfully demonstrated by a 64 kbit CCD memory. Since the memory chip contains its own CCD clock generator, all inputs are fully TTL compatible. The memory is organized 65 536 X 1 in 256 random access loops of 256 bits each. The memory array employs an 8-phase electrode/bit (E/B approach to achieve high packing density and to increase charge-carrying capacity. The chip size is 7.1 mm X 4.7 mm and 13 percent of the chip area is occupied by the CCD clock generator. The typical power dissipation is 205 mW in the active mode at 1 MHz and 40 mW in the standby mode at 50 kHz. Only 25 percent of the total power is devoted to the CCD clock generation at 1 MHz. The device is processed witlh an n-channel double level polysilicon-gate technology.
  • Keywords
    Charge-coupled devices; Semiconductor memories; Transistor-transistor logic; Charge coupled devices; Circuit noise; Clocks; Electrons; Frequency conversion; Laboratories; Random access memory; Solid state circuits; Voltage; Voltage-controlled oscillators;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1980.1051487
  • Filename
    1051487