Title :
CMOS transconductor VCO with adjustable operating and centre frequencies
Author :
Keeth, B. ; Baker, R.J. ; Li, H.W.
Author_Institution :
Dept. of Electr. Eng., Idaho Univ., Boise, ID, USA
fDate :
8/17/1995 12:00:00 AM
Abstract :
A novel monolithic VCO using a transconductance architecture and with adjustable operating and centre frequencies is presented. Oscillating frequencies from <1 Hz to >50 MHz were attained with external capacitors. Power dissipation from a 5 V supply was 150 mW driving a 20 pF load. The die size was 400×1500 μm2 and was fabricated using a 2 μm n-well double-metal CMOS process
Keywords :
CMOS integrated circuits; circuit tuning; mixed analogue-digital integrated circuits; radiofrequency oscillators; variable-frequency oscillators; voltage-controlled oscillators; 1 Hz to 50 MHz; 150 mW; 2 micron; 5 V; CMOS transconductor VCO; adjustable centre frequency; adjustable operating frequency; monolithic VCO; n-well double-metal CMOS process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951001
