DocumentCode :
889949
Title :
Bulk semiconductor high-speed current waveform generator
Author :
Shoji, Mamoru
Volume :
55
Issue :
5
fYear :
1967
fDate :
5/1/1967 12:00:00 AM
Firstpage :
720
Lastpage :
721
Abstract :
A saturated high-field domain in a Gunn oscillator with high nL product is equivalent to a wall moving with constant velocity, through which constant density of current flows. Consequently, the waveform of a nonuniformly shaped oscillator is the replica of its shape. The characteristic can be applied for high-speed current function generation.
Keywords :
Anodes; Cathodes; Current density; Doping profiles; Gallium arsenide; Gunn devices; Oscillators; Shape; Signal generators; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1967.5664
Filename :
1447594
Link To Document :
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