DocumentCode
889979
Title
A process-insensitive high-performance NMOS operational amplifier
Author
Tsividis, Yannis P. ; Fraser, Donald L., Jr. ; Dziak, John E.
Volume
15
Issue
6
fYear
1980
Firstpage
921
Lastpage
928
Abstract
A new high-performance NMOS operational amplifier is described which has been fabricated using a standard n-channel enhancement-depletion MOS process. A new input stage, employing common-mode feedback, is presented that reduces the circuit´s sensitivity to process variations. The compensation of MOS cascade stages is examined and a simple improvement is shown to dramatically reduce the total compensation capacitance. It is shown that the high-performance of this design is maintained for a large variation in depletion device thresholds. Finally, an output stage is described with low quiescent power dissipation and improved driving capabilities.
Keywords
Field effect integrated circuits; Linear integrated circuits; Operational amplifiers; field effect integrated circuits; linear integrated circuits; operational amplifiers; Bandwidth; Capacitance; Circuit noise; Feedback circuits; Immune system; MOS devices; Noise reduction; Operational amplifiers; Power dissipation; Threshold voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1980.1051498
Filename
1051498
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