• DocumentCode
    889979
  • Title

    A process-insensitive high-performance NMOS operational amplifier

  • Author

    Tsividis, Yannis P. ; Fraser, Donald L., Jr. ; Dziak, John E.

  • Volume
    15
  • Issue
    6
  • fYear
    1980
  • Firstpage
    921
  • Lastpage
    928
  • Abstract
    A new high-performance NMOS operational amplifier is described which has been fabricated using a standard n-channel enhancement-depletion MOS process. A new input stage, employing common-mode feedback, is presented that reduces the circuit´s sensitivity to process variations. The compensation of MOS cascade stages is examined and a simple improvement is shown to dramatically reduce the total compensation capacitance. It is shown that the high-performance of this design is maintained for a large variation in depletion device thresholds. Finally, an output stage is described with low quiescent power dissipation and improved driving capabilities.
  • Keywords
    Field effect integrated circuits; Linear integrated circuits; Operational amplifiers; field effect integrated circuits; linear integrated circuits; operational amplifiers; Bandwidth; Capacitance; Circuit noise; Feedback circuits; Immune system; MOS devices; Noise reduction; Operational amplifiers; Power dissipation; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1980.1051498
  • Filename
    1051498