DocumentCode :
889979
Title :
A process-insensitive high-performance NMOS operational amplifier
Author :
Tsividis, Yannis P. ; Fraser, Donald L., Jr. ; Dziak, John E.
Volume :
15
Issue :
6
fYear :
1980
Firstpage :
921
Lastpage :
928
Abstract :
A new high-performance NMOS operational amplifier is described which has been fabricated using a standard n-channel enhancement-depletion MOS process. A new input stage, employing common-mode feedback, is presented that reduces the circuit´s sensitivity to process variations. The compensation of MOS cascade stages is examined and a simple improvement is shown to dramatically reduce the total compensation capacitance. It is shown that the high-performance of this design is maintained for a large variation in depletion device thresholds. Finally, an output stage is described with low quiescent power dissipation and improved driving capabilities.
Keywords :
Field effect integrated circuits; Linear integrated circuits; Operational amplifiers; field effect integrated circuits; linear integrated circuits; operational amplifiers; Bandwidth; Capacitance; Circuit noise; Feedback circuits; Immune system; MOS devices; Noise reduction; Operational amplifiers; Power dissipation; Threshold voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1980.1051498
Filename :
1051498
Link To Document :
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