Interconnect rise time in superconducting integrated circuits

The influence of resistive losses on the voltage risetime of an integrated-circuit interconnection is reported. A distributed-circuit model is used to represent the interconnect. Numerous parametric curves are presented based on numerical evaluation of the exact analytical expression for the model´s transient response. For the superconducting case in which the series resistance of the interconnect approaches zero, the step-response risetime is longer but signal strength increases significantly. Shunt conductance is also shown to affect the risetime. The relationships between the model´s parameters and integrated-circuit geometry and material properties are discussed.<>