DocumentCode :
890058
Title :
Spatial distribution of excess carriers in electron-beam excited semiconductors
Author :
Wittry, D.B.
Volume :
55
Issue :
5
fYear :
1967
fDate :
5/1/1967 12:00:00 AM
Firstpage :
733
Lastpage :
734
Abstract :
The steady-state one-dimensional carrier distribution in depth is computed for electron-beam excitation of semiconductors, including diffusion and surface recombination. An exmple is given for n-type GaAs bombarded by a 29-kV electron beam.
Keywords :
Charge carrier density; Charge carrier processes; Electron beams; Equations; Gallium arsenide; Laser excitation; Radiative recombination; Spontaneous emission; Steady-state; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1967.5675
Filename :
1447605
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=890058
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