DocumentCode
890199
Title
Charge-sheet modelling of MOS I-V fundamental nonlinearities in MOSFET-C continuous-time filters
Author
Flandre, D. ; Jespers, P.
Author_Institution
Microelectron. Lab., Univ. Catholique de Louvain, Belgium
Volume
31
Issue
17
fYear
1995
fDate
8/17/1995 12:00:00 AM
Firstpage
1419
Lastpage
1420
Abstract
The linearity of two-MOSFET and four-MOSFET integrators used in MOSFET-C continuous-time filter implementations are compared using the charge-sheet model. The results question the widely-accepted superiority of the four-MOSFET structure in terms of higher attenuation of odd-order harmonic distortion
Keywords
MOS analogue integrated circuits; continuous time filters; harmonic distortion; integrated circuit modelling; integrating circuits; MOS I-V fundamental nonlinearities; MOSFET integrators; MOSFET-C continuous-time filters; attenuation; charge-sheet model; linearity; odd-order harmonic distortion;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951016
Filename
464150
Link To Document