Title :
Charge-sheet modelling of MOS I-V fundamental nonlinearities in MOSFET-C continuous-time filters
Author :
Flandre, D. ; Jespers, P.
Author_Institution :
Microelectron. Lab., Univ. Catholique de Louvain, Belgium
fDate :
8/17/1995 12:00:00 AM
Abstract :
The linearity of two-MOSFET and four-MOSFET integrators used in MOSFET-C continuous-time filter implementations are compared using the charge-sheet model. The results question the widely-accepted superiority of the four-MOSFET structure in terms of higher attenuation of odd-order harmonic distortion
Keywords :
MOS analogue integrated circuits; continuous time filters; harmonic distortion; integrated circuit modelling; integrating circuits; MOS I-V fundamental nonlinearities; MOSFET integrators; MOSFET-C continuous-time filters; attenuation; charge-sheet model; linearity; odd-order harmonic distortion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951016
