Title :
Modeling of an inversion base bipolar transistor
Author :
Meyyappan, M. ; Grubin, H.L.
Author_Institution :
Sci. Res. Associates Inc., Glastonbury, CT, USA
fDate :
1/1/1989 12:00:00 AM
Abstract :
Several two-dimensional numerical simulations performed to study the operational characteristics of a GaAs inversion base bipolar transistor (IBT) are discussed. The simulations show that at low base voltages the IBT operates like a junction field-effect transistor, which is characterized by a large depletion region near the base contact. At high base bias levels, there is a significant amount of hole injection into the active channel region, and the device begins to operate in the bipolar mode. The highest computed fT is 21 GHz at a collector current density of 1.3×104 A/cm2
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; 21 GHz; AlAs-GaAs; active channel region; collector current density; high base bias levels; hole injection; inversion base bipolar transistor; large depletion region; low base voltages; model; operational characteristics; two-dimensional numerical simulations; Bipolar transistors; Charge carrier processes; Current density; FETs; Gallium arsenide; Heterojunction bipolar transistors; Low voltage; Numerical simulation; Poisson equations; Technological innovation;
Journal_Title :
Electron Devices, IEEE Transactions on
