Title :
0-90 GHz InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC
Author :
Kimura, S. ; Imai, Y. ; Umeda, Y. ; Enoki, T.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
8/17/1995 12:00:00 AM
Abstract :
An InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC that uses a new loss compensation technique for the drain artificial line is described. The amplifier IC has a gain of 10 dB with a 0-90 GHz bandwidth. This is the widest bandwidth among all reported baseband ICs to date
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; compensation; coplanar waveguides; distributed amplifiers; field effect MIMIC; field effect analogue integrated circuits; gallium arsenide; indium compounds; wideband amplifiers; 10 dB; 90 GHz; CPW technology; EHF; HEMT amplifier; InAlAs-InGaAs-InP; MM-wave IC; distributed baseband amplifier IC; drain artificial line; loss compensation technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951032
