Title :
50 Gbit/s time-division multiplexer in Si-bipolar technology
Author :
Möller, M. ; Rein, H.M. ; Felder, A. ; Popp, J. ; Böck, J.
Author_Institution :
Ruhr-Univ., Bochum, Germany
fDate :
8/17/1995 12:00:00 AM
Abstract :
A 2:1 time-division multiplexer is presented which operates up to 50 Gbit/s. This is the highest data rate ever achieved by an integrated circuit in any technology. The output voltage swing is 1 V peak-to-peak at 40 Gbit/s and 0.6 V peak-to-peak at 50 Gbit/s (at 50 Ω on-chip matching). The chips were fabricated in an advanced Si-bipolar technology (fT=35 GHz) and mounted on a comparatively simple measuring socket
Keywords :
bipolar digital integrated circuits; digital communication; elemental semiconductors; multiplexing equipment; optical communication equipment; silicon; time division multiplexing; 0.6 to 1 V; 35 GHz; 50 Gbit/s; Gbit/s data rate; Si; Si bipolar technology; monolithic integrated circuit; time-division multiplexer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950971
