• DocumentCode
    890283
  • Title

    50 Gbit/s time-division multiplexer in Si-bipolar technology

  • Author

    Möller, M. ; Rein, H.M. ; Felder, A. ; Popp, J. ; Böck, J.

  • Author_Institution
    Ruhr-Univ., Bochum, Germany
  • Volume
    31
  • Issue
    17
  • fYear
    1995
  • fDate
    8/17/1995 12:00:00 AM
  • Firstpage
    1431
  • Lastpage
    1433
  • Abstract
    A 2:1 time-division multiplexer is presented which operates up to 50 Gbit/s. This is the highest data rate ever achieved by an integrated circuit in any technology. The output voltage swing is 1 V peak-to-peak at 40 Gbit/s and 0.6 V peak-to-peak at 50 Gbit/s (at 50 Ω on-chip matching). The chips were fabricated in an advanced Si-bipolar technology (fT=35 GHz) and mounted on a comparatively simple measuring socket
  • Keywords
    bipolar digital integrated circuits; digital communication; elemental semiconductors; multiplexing equipment; optical communication equipment; silicon; time division multiplexing; 0.6 to 1 V; 35 GHz; 50 Gbit/s; Gbit/s data rate; Si; Si bipolar technology; monolithic integrated circuit; time-division multiplexer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950971
  • Filename
    464159
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=890283