Title :
Waveguiding in epitaxial 3C-silicon carbide on silicon
Author :
Jackson, S.M. ; Reed, G.T. ; Reeson, K.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
fDate :
8/17/1995 12:00:00 AM
Abstract :
Waveguiding in 3C-silicon carbide has been observed following ion implantation of oxygen. The losses have been measured at different stages of the anneal process
Keywords :
annealing; ion implantation; optical fabrication; optical losses; optical planar waveguides; semiconductor epitaxial layers; semiconductor materials; silicon compounds; O ion implantation; Si; SiC-Si; anneal process; cubic SiC; epitaxial 3C-SiC on silicon; losses; waveguiding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950997
