DocumentCode
890379
Title
High-speed sequential readout for infrared CID arrays with DC-coupled injection
Author
Wang, Samuel C H ; Swab, John M. ; Winn, Michael L.
Author_Institution
General Electric Co., Syracuse, NY, USA
Volume
36
Issue
1
fYear
1989
fDate
1/1/1989 12:00:00 AM
Firstpage
70
Lastpage
74
Abstract
A high-speed readout scheme for the single-gate charge injection device (CID) linear array using DC-coupled injection (DCI) is described. In contrast to the conventional readout techniques with AC-coupled injection (ACI), DCI provides better time management in reading out the signal charge. Lower device lag is achieved by the longer injection time facilitated by DCI for a given elemental readout cycle
Keywords
CCD image sensors; digital readout; infrared imaging; DC-coupled injection; device lag; high-speed readout scheme; infrared CID arrays; injection time; sequential readout; signal charge; single-gate charge injection device; time management; Capacitors; Charge coupled devices; Circuits; Image resolution; Optical arrays; Optical imaging; Preamplifiers; Radiative recombination; Sensor arrays; Sensor systems;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.21180
Filename
21180
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