Title :
Fluidic self-assembly of InGaAs vertical cavity surface emitting lasers onto silicon
Author :
Tu, J.K. ; Talghader, J.J. ; Hadley, M.A. ; Smith, J.S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
8/17/1995 12:00:00 AM
Abstract :
Vertical cavity surface emitting lasers (VCSELs) have been successfully integrated by fluidic self-assembly (FSA) into 10 μm deep holes etched into an Si substrate. These 40×40×10 μm 3 devices were fully planarised and metallised after integration. The VCSELs operated pulsed at O.98 μm with a threshold current as low as 75 mA and a turn-on voltage of 2.9 V
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; integrated optoelectronics; laser cavity resonators; microassembling; optical fabrication; semiconductor lasers; surface emitting lasers; 0.98 micron; 2.9 V; 75 mA; InGaAs; OEIC; Si; Si substrate; VCSEL; etching; fluidic self-assembly; surface emitting lasers; vertical cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950989
