مرکز منطقه ای اطلاع رساني علوم و فناوري - Electric parameter evolutions against gatelength and bias in ultrashort gate AlGaAs/GaAs HEMTs

DocumentCode :

890422

Title :

Electric parameter evolutions against gatelength and bias in ultrashort gate AlGaAs/GaAs HEMTs

Author :

Jin-Delorme, Y. ; de Lustrac, Andre ; Crozat, P. ; Yazbek, Khaled ; Adde, R. ; Vernet, G. ; Yin, Yingjie ; Etienne, B. ; Launois, H.

Author_Institution :

Univ. Paris Sud, Orsay, France

Volume :

Issue :

fYear :

1993

fDate :

4/1/1993 12:00:00 AM

Firstpage :

642

Lastpage :

643

Abstract :

The electric parameter evolutions of state of the art ultrashort gate planar doped AlGaAs/GaAs HEMTs are studied against gatelength l_g=0.4-0.1 mu m and bias. The best value of maximum intrinsic transconductance obtained is g_m0max=800 mS/mm at l_g=0.15 mu m and the measured cutoff frequency is f_t=125 GHz at l_g=0.1 mu m.

Keywords :

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; solid-state microwave devices; 0.4 to 0.1 micron; 125 GHz; AlGaAs-GaAs; bias; cutoff frequency; electric parameter evolutions; gatelength; maximum intrinsic transconductance; planar doped HEMTs; semiconductors; submicron gate; ultrashort gate HEMTs;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:19930429

Filename :

211828

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=890422