• DocumentCode
    890424
  • Title

    GaInAsP/InP SBH surface emitting laser with Si/Al2O3 mirror

  • Author

    Uchiyama, S. ; Kashiwa, S.

  • Author_Institution
    Optoelectron. Furukawa Kab., Furukawa Electr. Co. Ltd., Yokohama, Japan
  • Volume
    31
  • Issue
    17
  • fYear
    1995
  • fDate
    8/17/1995 12:00:00 AM
  • Firstpage
    1449
  • Lastpage
    1451
  • Abstract
    An Si/Al2O3 mirror has been introduced into the p-side mirror of a 1.3 μm GaInAsP/InP square buried heterostructure (SBH) surface emitting (SE) laser to decrease thermal resistance. The low threshold pulsed oscillation (threshold current I th=12 mA) has been obtained for an 8×8 μm device at room temperature. Its threshold current density was ~18 kA/cm2. Near room temperature (13°C) CW oscillation for another chip has also been realised
  • Keywords
    III-V semiconductors; alumina; current density; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; laser transitions; semiconductor lasers; silicon; surface emitting lasers; thermal resistance; 1.3 micron; 12 mA; 13 C; BH surface emitting laser; CW oscillation; GaInAsP-InP; Si-Al2O3; Si/Al2O3 mirror; buried heterostructure SEL; low threshold pulsed oscillation; thermal resistance reduction; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950985
  • Filename
    464172
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=890424