Title :
GaInAsP/InP SBH surface emitting laser with Si/Al2O3 mirror
Author :
Uchiyama, S. ; Kashiwa, S.
Author_Institution :
Optoelectron. Furukawa Kab., Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
8/17/1995 12:00:00 AM
Abstract :
An Si/Al2O3 mirror has been introduced into the p-side mirror of a 1.3 μm GaInAsP/InP square buried heterostructure (SBH) surface emitting (SE) laser to decrease thermal resistance. The low threshold pulsed oscillation (threshold current I th=12 mA) has been obtained for an 8×8 μm device at room temperature. Its threshold current density was ~18 kA/cm2. Near room temperature (13°C) CW oscillation for another chip has also been realised
Keywords :
III-V semiconductors; alumina; current density; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; laser transitions; semiconductor lasers; silicon; surface emitting lasers; thermal resistance; 1.3 micron; 12 mA; 13 C; BH surface emitting laser; CW oscillation; GaInAsP-InP; Si-Al2O3; Si/Al2O3 mirror; buried heterostructure SEL; low threshold pulsed oscillation; thermal resistance reduction; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950985
