• DocumentCode
    890492
  • Title

    Applications of single and dual gate GaAs MESFETs for Gbit/s optical data transfer systems

  • Author

    Filensky, Wilhelm ; Ponse, Frederik ; Beneking, Heinz

  • Volume
    16
  • Issue
    2
  • fYear
    1981
  • fDate
    4/1/1981 12:00:00 AM
  • Firstpage
    93
  • Lastpage
    99
  • Abstract
    Intrinsic large signal rise and fall times of less than 30 ps without charge storage demonstrate the potential of single and dual gate GaAs MESFETs for Gbit/s optical communication systems. The applications as signal regenerator, bit synchronizer, laser modulator, multiplexer, and demultiplexer are shown. Using only one dual gate GaAs MESFET clock and pulse shape regeneration as well as 1 Gbit/s laser modulation is performed. Bit synchronization is demonstrated up to 4 Gbit/s. 1 to 2 Gbit/s and 2 to 4 Gbit/s multiplexing as well as 2 to 1 Gbit/s demultiplexing with additional clock and pulse shape regeneration is shown using dual gate FETs. 2 to 4 Gbit/s multiplexing without clock regeneration is also accomplished using single gate GaAs MESFETs.
  • Keywords
    Digital communication systems; Gallium arsenide; III-V semiconductors; Multiplexing; Optical communication equipment; Optical modulation; Pulse shaping circuits; Schottky gate field effect transistors; Synchronisation; digital communication systems; gallium arsenide; multiplexing; optical communication equipment; optical modulation; pulse shaping circuits; synchronisation; Clocks; Gallium arsenide; MESFETs; Optical fiber communication; Optical modulation; Optical pulse shaping; Pulse modulation; Repeaters; Shape; Synchronization;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1981.1051547
  • Filename
    1051547