Title :
Composite n-MOSFET for submicrometre circuits
Author :
Ge, D.Y. ; Hwang, N. ; Forbes, L.
Author_Institution :
Oregon State Univ., Corvallis, OR, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
Proposes a new composite n-MOS device to replace conventional n-channel devices in submicrometre amplifier circuits whenever a large drain-source voltage is encountered. The composite device improves the lifetime of a simple amplifier by eight orders of magnitude. Increasing the device channel length to reduce the effects of hot electron degradation has also been investigated as an alternative in contrast to the composite device, but is demonstrated to be an inferior design choice.
Keywords :
MOS integrated circuits; amplifiers; hot carriers; insulated gate field effect transistors; reliability; composite n-MOS device; composite n-MOSFET; device channel length; device reliability; hot-electron degradation reduction; large drain-source voltage; lifetime increase; submicrometre amplifier circuits; submicrometre circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930417
