Title :
Characterization of surface mobility in MOS structures containing interfacial cesium ions
Author :
Watt, Jeffrey T. ; Fishbein, Bruce J. ; Plummer, James D.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
1/1/1989 12:00:00 AM
Abstract :
The degradation of inversion-layer electron and hole mobility in silicon MOS devices by interface charge at 295 and 77 K is discussed. The charge was controllably introduced using cesium implanted into the gate oxide and subsequently diffused to the oxide-substrate interface. The charged-impurity-scattering component of the mobility has been extracted and characterized as a function of inversion charge density and cesium dose
Keywords :
carrier mobility; impurity scattering; interface electron states; inversion layers; metal-insulator-semiconductor structures; surface scattering; 295 K; 77 K; MOS structures; Si-SiO2:Cs; charged-impurity-scattering component; electron mobility; hole mobility; interface charge; inversion charge density; inversion-layer; oxide-substrate interface; surface mobility; Charge carrier processes; Contracts; Degradation; Doping; Impurities; MOS devices; MOSFET circuits; Scattering; Temperature; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
