Title :
Separate Extraction of Gate Resistance Components in RF MOSFETs
Author :
Kang, Myounggon ; Kang, In Man ; Jung, Young Ho ; Shin, Hyungcheol
Author_Institution :
Samsung Electron. Co., Hwasung
fDate :
6/1/2007 12:00:00 AM
Abstract :
A simple and accurate method is presented for extraction of the gate resistance components of RF MOSFETs. Both the gate electrode resistance and the channel resistance were extracted separately. Also, the gate electrode resistance was separated into an external component and an internal component. The gate electrode resistance was extracted at OFF state, and the channel resistance was extracted with at ON state. The simple extraction methodology is applied to extract parameters from the measured S-parameters of RF MOSFETs that are fabricated with 130-nm CMOS technology.
Keywords :
CMOS integrated circuits; MOSFET; S-parameters; radiofrequency integrated circuits; CMOS technology; RF MOSFET; S-parameters; channel resistance extraction; gate electrode resistance extraction; gate resistance components; size 130 nm; CMOS technology; Cutoff frequency; Electrical resistance measurement; Electrodes; Fingers; MOSFETs; Noise figure; Parameter extraction; Radio frequency; Scattering parameters; Channel resistance; electrode resistance; gate resistance; modeling; parameter extraction; radio-frequency MOSFETs (RF MOSFETs);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.896361
