Title :
L-band epitaxial Gunn oscillators
Author :
Berson, B.E. ; Narayan, S.Y.
fDate :
6/1/1967 12:00:00 AM
Abstract :
Gunn oscillators have been made from epitaxially grown GaAs n+-n-n+"sandwich" structures. Peak powers up to 56 watts have been obtained in L-band with an efficiency of 15 percent. The positive temperature coefficient of resistance of the epitaxial material provides a built-in protection against thermal runaway.
Keywords :
Gallium arsenide; Gunn devices; L-band; Ohmic contacts; Oscillators; Packaging; Protection; Radio frequency; Stability; Temperature;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.5726
