DocumentCode :
890577
Title :
Spreading Antenna Effect of PID in Damascene Interconnect Process
Author :
Matsunaga, Noriaki ; Yamaguchi, Hitomi ; Shibata, Hideki
Author_Institution :
Center for Semicond. R&D Toshiba Corp., Yokohama
Volume :
54
Issue :
6
fYear :
2007
fDate :
6/1/2007 12:00:00 AM
Firstpage :
1486
Lastpage :
1491
Abstract :
Plasma-induced charging damage (PID) in a damascene interconnect process was investigated in detail. We found that the antenna area dependence of the PID in the damascene interconnect process is not a simple relation to the upper surface area of the metal wiring. Since the charges are injected through the dielectric films on the wiring, the effective antenna area that can collect the charges became larger than the area that is defined by the upper surface area of the metal wiring. The effective antenna area was studied by electrical field simulation, and a spreading antenna width was proposed and defined.
Keywords :
MOSFET; dielectric thin films; interconnections; plasma materials processing; wiring; MOSFET; damascene interconnect process; damascene wiring process; dielectric films; electrical field simulation; metal wiring; plasma-induced charging damage; spreading antenna effect; Dielectric films; Electrodes; Etching; MOSFET circuits; Plasma applications; Plasma devices; Protection; Semiconductor diodes; Surface charging; Wiring; Antenna effect; damascene interconnect; plasma-induced charging damage (PID);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2007.896360
Filename :
4215183
Link To Document :
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