Title :
Germanium MOSFETs With CeO2/HfO2/ TiN Gate Stacks
Author :
Nicholas, Gareth ; Brunco, David P. ; Dimoulas, A. ; Van Steenbergen, Jan ; Bellenger, Florence ; Houssa, Michel ; Caymax, Matty ; Meuris, Marc ; Panayiotatos, Y. ; Sotiropoulos, Andreas
Author_Institution :
Interuniv. Microelectron. Center, Leuven
fDate :
6/1/2007 12:00:00 AM
Abstract :
Long-channel Ge pMOSFETs and nMOSFETs were fabricated with high-kappa CeO2/HfO2/TiN gate stacks. CeO2 was found to provide effective passivation of the Ge surface, with low diode surface leakage currents. The pMOSFETs showed a large I ON/IOFF ratio of 106, a subthreshold slope of 107 mV/dec, and a peak mobility of approximately 90 cm2 /Vmiddots at 0.25 MV/cm. The nMOSFET performance was compromised by poor junction formation and demonstrated a peak mobility of only ~3 cm2/Vmiddots but did show an encouraging ION/I OFF ratio of 105 and a subthreshold slope of 85 mV/dec
Keywords :
MOSFET; cerium compounds; elemental semiconductors; germanium; hafnium compounds; high-k dielectric thin films; leakage currents; passivation; titanium compounds; CeO2-HfO2-TiN; MOSFET; dielectric films; high-K gate stacks; leakage currents; surface passivation; Dielectrics; Electron mobility; Germanium; Hafnium oxide; Laboratories; MOS devices; MOSFETs; Microelectronics; Thin film transistors; Tin; $hbox{CeO}_{2}$; $hbox{HfO}_{2}$ ; MOSFET; dielectric films; germanium; high-$kappa$;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.896352
