DocumentCode
890696
Title
670 nm semiconductor laser diode pumped erbium-doped fibre amplifiers
Author
Horiguchi, M. ; Yoshino, Kohzoh ; Shimizu, Maiko ; Yamada, Makoto
Author_Institution
NTT Optoelectronics Labs., Ibaraki, Japan
Volume
29
Issue
7
fYear
1993
fDate
4/1/1993 12:00:00 AM
Firstpage
593
Lastpage
595
Abstract
A highly efficient Er-doped fibre amplifier pumped by a visible laser diode is reported. Using a 670 nm AlGaInP laser diode as a pump light source and a high NA erbium-doped fibre, the EDFA realised a maximum signal gain of 33 dB at 1535 nm, with a saturated output power of 4 dBm. A maximum gain coefficient of 3.0 dB/mW was achieved for 670 nm laser diode pumping.
Keywords
erbium; fibre lasers; laser transitions; optical pumping; 1535 nm; 33 dB; 670 nm; AlGaInP laser; Er-doped fibre; LD pumped fibre amplifier; pump light source; semiconductor laser; visible laser diode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930398
Filename
211858
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