Title :
Selective metallisation on Ge for ohmic contact to GaAs
Author :
Mitani, K. ; Imamura, Yusuke
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
4/1/1993 12:00:00 AM
Abstract :
Refractory W electrodes are selectively deposited on a Ge contact layer with no W deposition on the surrounding SiO2 by employing WF6/SiH4 chemistry. The contact resistance of CVD-W to heavily-doped p-Ge is below 10-7 Omega cm2, which is suitable for selective ohmic metallisation for GaAs devices.
Keywords :
CVD coatings; contact resistance; elemental semiconductors; germanium; heavily doped semiconductors; metallisation; ohmic contacts; semiconductor-metal boundaries; tungsten; GaAs devices; Ge contact layer; SiH 4; SiO 2; W deposition; WF 6; WF 6-SiH 4 chemistry; contact resistance; heavily-doped p-Ge; ohmic contact; refractory W electrodes; selective ohmic metallisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930395
