Title :
A coplanar CMOS power switch
Author :
Habekotté, Ernst ; Hoefflinger, Bernd ; Renker, Wolfgang ; Zimmer, Günter
fDate :
6/1/1981 12:00:00 AM
Abstract :
A 300 V power switch in a high-voltage CMOS technology compatible with a low-voltage MOS/bipolar technology is presented. This circuit can switch positive and negative 150 V pulses with rise and fall times of 100 ns for a 200 pF capacitive load. The switch has a low-voltage input control (/spl plusmn/15 V). Using earth-symmetrical non-overlapping high-voltage pulses as dynamic supply voltages, it is possible to reduce the power dissipation during the switching time considerably in comparison with the power dissipation of power switches, which use static (i.e., constant) supply voltages under the same conditions.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Semiconductor switches; Switching circuits; field effect integrated circuits; integrated circuit technology; semiconductor switches; switching circuits; CMOS technology; Driver circuits; Electrodes; Frequency; Packaging; Power dissipation; Pulsed power supplies; Solid state circuits; Switches; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1981.1051576
