Title :
Mode characteristics of semiconductor equilateral triangle microcavities with side length of 5-20 μm
Author :
Qiao-Yin Lu ; Xiao-Hong Chen ; Wei-Hua Guo ; Li-Juan Yu ; Yong-Zhen Huang ; Jian Wang ; Yi Luo
Author_Institution :
State Key Lab. on Integrated Optoelectronics, Chinese Acad. of Sci., Beijing, China
Abstract :
Semiconductor equilateral triangle microresonators (ETRs) with side length of 5, 10, and 20 μm are fabricated by the two-step inductively coupled plasma (ICP) etching technique. The mode properties of fabricated InGaAsP ETRs are investigated experimentally by photoluminescence (PL) with the pumping source of a 980-nm semiconductor laser and distinct peaks are observed in the measured PL spectra. The wavelength spacings of the distinct peaks agree very well with the theoretical longitudinal mode intervals of the fundamental transverse modes in the ETRs, which verifies that the distinct peaks are corresponding to the enhancement of resonant modes. The mode quality factors are calculated from the width of the resonant peaks of the PL spectra, which are about 100 for the ETR with side length of 20 μm.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; microcavities; microcavity lasers; optical fabrication; optical pumping; photoluminescence; quantum well lasers; semiconductor quantum wells; sputter etching; 5 to 20 mum; 980 nm; InGaAsP; InGaAsP ETRs; PL spectra; equilateral triangle microresonators; inductively coupled plasma etching; mode quality factors; photoluminescence; pumping source; quantum wells; resonant modes; semiconductor equilateral triangle microcavities; semiconductor laser; transverse modes; Etching; Laser excitation; Microcavities; Photoluminescence; Plasma applications; Plasma measurements; Plasma properties; Plasma sources; Plasma waves; Resonance;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.821063
