Title :
Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation
Author :
Wang, Runsheng ; Zhuge, Jing ; Huang, Ru ; Tian, Yu ; Xiao, Han ; Zhang, Liangliang ; Li, Chen ; Zhang, Xing ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
fDate :
6/1/2007 12:00:00 AM
Abstract :
In this paper, the analog/RF performance of Si nanowire transistors (SNWTs) and the impact of process variation are investigated for the first time. Analog/RF figures of merit of SNWTs are studied, including transconductance efficiency gm/Id, intrinsic gain gm/gd, cutoff frequency ft , and maximum oscillation frequency fmax. The results indicate that SNWTs exhibit superior intrinsic RF scaling capability and are suitable for low-power analog/RF applications. The impact of nanowire cross-sectional shape fluctuation that is caused by process variation is studied and found to be relatively severe, and the acceptable variation tolerance for RF integrated circuit design is given
Keywords :
MOSFET; elemental semiconductors; nanowires; silicon; RF integrated circuit design; Si; Si nanowire MOSFET; analog/RF performance; intrinsic RF scaling capability; nanowire cross-sectional shape fluctuation; nanowire transistors; process variation; CMOS technology; Computational modeling; Cutoff frequency; Fluctuations; Integrated circuit synthesis; MOSFETs; Radio frequency; Shape; Transconductance; Voltage; Analog; Si nanowire transistor (SNWT); process variation; radio frequency (RF);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.896598
