Title :
InP-based optically pumped VECSEL operating CW at 1550 nm
Author :
Lindberg, Hans ; Strassner, Martin ; Bengtsson, Jörgen ; Larsson, Anders
Author_Institution :
Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
We present a vertical external-cavity surface-emitting laser operating at 1550 nm. The laser comprises an InGaAsP-based gain element, with a resonant periodic gain structure on top of a distributed Bragg reflector, and a high reflectivity spherical mirror as the external reflector. Optical pumping is achieved using a 1250-nm fiber Raman laser. A maximum continuous output power of 70 mW was obtained under multitransverse mode operation at 233 K. Under single-mode operation, we obtained a maximum power of 60 mW with a beam quality factor M2 less than 1.1.
Keywords :
III-V semiconductors; Raman lasers; distributed Bragg reflectors; fibre lasers; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser mirrors; laser modes; optical pumping; quantum well lasers; reflectivity; semiconductor quantum wells; surface emitting lasers; 1250 nm; 233 K; 60 mW; 70 mW; InGaAsP; InGaAsP-based gain element; InP; InP-based VECSEL; cw operation; distributed Bragg reflector; external reflector; fiber Raman laser; high-power laser; multitransverse mode operation; optical pumping; optically pumped VECSEL; quantum well; reflectivity; resonant periodic gain structure; semiconductor laser; single-mode operation; spherical mirror; vertical external-cavity surface-emitting laser; Distributed Bragg reflectors; Fiber lasers; Mirrors; Optical pumping; Periodic structures; Pump lasers; Reflectivity; Resonance; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.823127
