DocumentCode :
890767
Title :
Strain effect on K factor, differential gain and nonlinear gain coefficient for InGaAs/InGaAsP strained multiquantum well lasers
Author :
Shimizu, J.-I. ; Kimura, Akihiro ; Naniwae, K. ; Nido, M. ; Murata, Shotaro ; Tomita, Akihisa ; Suzuki, A.
Author_Institution :
NEC Corp., Ibaraki, Japan
Volume :
29
Issue :
7
fYear :
1993
fDate :
4/1/1993 12:00:00 AM
Firstpage :
579
Lastpage :
581
Abstract :
The strain effect on the K factor, the differential gain and the nonlinear gain coefficient for InGaAs/InGaAsP tensile-strained and compressive-strained multiquantum well (MQW) lasers is experimentally investigated from the intrinsic modulation response. The differential gain increases with an increase in strain for both types of laser. The strain dependence of the nonlinear gain coefficient is not as high as that of the differential gain. Therefore, the K factor for strained MQW lasers mainly results from the differential gain.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor lasers; InGaAs-InGaAsP; K factor; compressive-strained; differential gain; intrinsic modulation response; multiquantum well; nonlinear gain coefficient; semiconductor lasers; strain dependence; strained MQW lasers; tensile-strained;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930389
Filename :
211867
Link To Document :
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