Title :
Strain effect on K factor, differential gain and nonlinear gain coefficient for InGaAs/InGaAsP strained multiquantum well lasers
Author :
Shimizu, J.-I. ; Kimura, Akihiro ; Naniwae, K. ; Nido, M. ; Murata, Shotaro ; Tomita, Akihisa ; Suzuki, A.
Author_Institution :
NEC Corp., Ibaraki, Japan
fDate :
4/1/1993 12:00:00 AM
Abstract :
The strain effect on the K factor, the differential gain and the nonlinear gain coefficient for InGaAs/InGaAsP tensile-strained and compressive-strained multiquantum well (MQW) lasers is experimentally investigated from the intrinsic modulation response. The differential gain increases with an increase in strain for both types of laser. The strain dependence of the nonlinear gain coefficient is not as high as that of the differential gain. Therefore, the K factor for strained MQW lasers mainly results from the differential gain.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor lasers; InGaAs-InGaAsP; K factor; compressive-strained; differential gain; intrinsic modulation response; multiquantum well; nonlinear gain coefficient; semiconductor lasers; strain dependence; strained MQW lasers; tensile-strained;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930389