DocumentCode
890771
Title
Tunneling currents via Au levels in Ge Esaki diodes
Author
Streetman, B.G. ; Sah, C.T.
Volume
55
Issue
6
fYear
1967
fDate
6/1/1967 12:00:00 AM
Firstpage
1105
Lastpage
1106
Abstract
Esaki diodes have been fabricated on n-type Ge diffused with Au. A hump is observed in the valley of the I-V characteristics due to two-step interactions with the Au levels.
Keywords
Contact resistance; Cutoff frequency; Electrical resistance measurement; Frequency estimation; Gallium arsenide; Gold; Schottky diodes; Semiconductor diodes; Semiconductor materials; Tunneling;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.5750
Filename
1447680
Link To Document