Title :
The Development of CCD Analog TV Line Stores
Author :
Gooding, J.N. ; Paddan, P.S. ; Browne, V.A.
fDate :
6/1/1981 12:00:00 AM
Abstract :
This correspondence discusses the development of analog TV line stores with very low spatial noise and wide signal bandwidth. These devices are fabricated on a buried n-channel silicon gate process which exhibits low thermal leakage and low leakage spike density. A 768-stage and an 850-stage store have been designed. The problems which have been encountered during the development and their solutions are described.
Keywords :
Analog memories; Charge-coupled devices; TV equipment; Video signal processing; Bandwidth; Charge coupled devices; Circuit noise; Image storage; Leakage current; Noise level; Signal resolution; Silicon; Spatial resolution; TV;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1981.1051579
