Title :
High-frequency modulation characteristics of 1.3-μm InGaAs quantum dot lasers
Author :
Kim, S.M. ; Wang, Y. ; Keever, M. ; Harris, James S.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
We report results of small-signal modulation characteristics of self-assembled 1.3-μm InGaAs-GaAs quantum dot (QD) lasers at room temperature. The narrow ridge-waveguide lasers were fabricated with multistack InGaAs self-assembled QDs in active region. A high characteristic temperature of T/sub o/=210 K with threshold current density of 200A/cm2 was obtained. Small-signal modulation bandwidth of f/sub -3 dB/=12 GHz was measured at 300 K with differential gain of dg/dn/spl cong/2.4×10/sup -14/ cm2 from detailed characteristics. We observed that a limitation of modulation bandwidth in high current injection appeared with gain saturation. This property can direct future high-speed QD laser design.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser variables measurement; optical fabrication; optical modulation; quantum dot lasers; ridge waveguides; self-assembly; semiconductor epitaxial layers; semiconductor quantum dots; waveguide lasers; 1.3 mum; 12 GHz; 20 degC; 210 K; 300 K; InGaAs quantum dot lasers; InGaAs-GaAs; InGaAs-GaAs quantum dot lasers; carrier dynamics; current injection; gain saturation; high-frequency modulation; multistack InGaAs self-assembled QD; narrow ridge-waveguide lasers; room temperature; self-assembled quantum dot lasers; semiconductor quantum dots; small-signal modulation; Bandwidth; Chemical lasers; Fiber lasers; Indium gallium arsenide; MOCVD; Quantum dot lasers; Semiconductor lasers; Temperature; Threshold current; US Department of Transportation;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.823088
